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| AP01N60H/J Pb Free Plating Product Advanced Power Electronics Corp. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.6A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. G DS TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 30 1.6 1 6 39 0.31 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 13 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Units /W /W 200705052-1/4 Data & specifications subject to change without notice AP01N60H/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.6 7.2 0.8 7.7 1.5 2.6 8 5 14 7 286 25 5 Max. Units 8 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=0.8A VDS=VGS, ID=250uA VDS=50V, ID=0.8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A RG=10,VGS=10V RD=187.5 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 1.6 6 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=1.6A, VGS=0V Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP01N60H/J 1.5 0.9 T C =25 C o ID , Drain Current (A) ID , Drain Current (A) 10V 6.0V 5.5V T C =150 o C 10V 6.0V 5.5V 1 0.6 5.0V 0.5 5.0V 0.3 V G = 4.5 V V G = 4.5 V 0 0 5 10 15 20 0 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 Normalized BVDSS (V) Normalized RDS(ON) 1.1 I D =0.8A V G =10V 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 IS (A) 10 T j = 150 o C T j = 25 o C VGS(th) (V) 3 1 2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP01N60H/J f=1.0MHz 16 1000 VGS , Gate to Source Voltage (V) 12 I D =1.6A V DS =480V 100 C iss 8 C (pF) C oss 10 4 C rss 0 0 2 4 6 8 10 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10us 1 100us 1ms 10ms 0.2 ID (A) 0.1 0.1 0.05 PDM 0.02 0.1 t T Single Pulse T c =25 o C Single Pulse 0.01 1 10 100 100ms 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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